This Varian Mod Gen II MBE Molecular Beam Epitaxy System is being sold as it is surplus to requirements.

The system was built in the early 1990s and is around 2m long, 1.65 m wide and 2m tall, weighs around 1.5 tonnes. The system is a 3" capable MBE growth kit and has been used to grow a wide variety of III-V semiconductors including arsenides, antimonides and dilute bismides. As a consequence, it is contaminated with both antimony and arsenic.

The chamber is a solid source MBE chamber configured to grow the full range of III-V arsenide and antimonide undoped and doped semiconductor structures including dilute nitride and bismide materials,

The chamber has RHEED monitoring and is capable of growth on full 3" wafers down to 1/4 of 2" wafers. It has nine sources installed, though the Sb cell is not functional. This however can be refurbished by Riber - this has been confirmed. 

The computer control is via software from 2003. 

All of the pumping systems are fully operational - turbos, ion pumps and a cryopump. There is also a 9kW ATC chiller used to maintain the beam panel at -17°C.